Part Number Hot Search : 
DS2172 GBJ15005 GBPC4008 CA3096M D0305 R3010T22 74AHCT14 CA3290AE
Product Description
Full Text Search

IRG4BC15MDPBF - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 绝缘栅双极型晶体管,超快软恢复二极管

IRG4BC15MDPBF_4798079.PDF Datasheet


 Full text search : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 绝缘栅双极型晶体管,超快软恢复二极管


 Related Part Number
PART Description Maker
IRG4BC40K Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
International Rectifier, Corp.
IRF[International Rectifier]
IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
IRG4BC29F IRG4BC30F IRG4BC30 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)
IRF[International Rectifier]
International Rectifier, Corp.
MGW14N60ED-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MMG05N60D-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGY25N120-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGW21N60ED-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP20N60U-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP15N60U-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGW12N120-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
CM600HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
MGW12N120 Insulated Gate Bipolar Transistor
MOTOROLA INC
MOTOROLA[Motorola, Inc]
 
 Related keyword From Full Text Search System
IRG4BC15MDPBF Hex IRG4BC15MDPBF Address IRG4BC15MDPBF 电子元器件 IRG4BC15MDPBF Gate IRG4BC15MDPBF corp
IRG4BC15MDPBF Reference IRG4BC15MDPBF 接腳圖 IRG4BC15MDPBF schottky IRG4BC15MDPBF Drain IRG4BC15MDPBF 価格
 

 

Price & Availability of IRG4BC15MDPBF

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.77395606040955